研究领域：
碳基新型电子器件及高能效数字集成电路芯片的研究
教育经历：
2009-2013 电子科技大学 微电子学理学 学士学位
2013-2019 北京大学 物理电子学 博士学位
工作履历/科研教育经历：
2019-2021 新加坡国立大学 自旋电子学 博士后
自我介绍：
2013年毕业于电子科技大学微电子学专业，随后在北京大学物理电子所彭练矛教授，张志勇教授的指导下进行碳基电子器件及电路的研究，并于2019年获得博士学位。毕业后前往新加坡国立大学从事自旋电子存储器件及应用的博士后研究。现任北京大学碳基电子学研究中心助理研究员，主要从事碳基新型电子器件及高能效数字集成电路芯片的研究。先后承担新加坡国家研究基金会、中国国家自然基金等科技项目，在Science、Nature Electronics、ACS Nano、Advanced Materials、IEEE Transaction on Electron Devices、Advanced Electronic Materials等学术刊物发表高水平科技论文。目前主要研究方向：碳基新型电子器件及高能效数字集成电路芯片的研究。
重要研究成果：
发明专利：
1.Method for increasing density of aligned carbon nanotubes. US 14/453,831
2.一种提高碳纳米管平行阵列密度的方法。ZL 2014 1 0154960.3
3.借助弹性材料泊松比提高碳纳米管平行阵列密度的方法。ZL 2014 1 0447621.4
期刊论文：
1.Si, J.; Xu, L.; Zhu, M.; Zhang, Z.; Peng, L.-M. Advances in High-Performance Carbon-Nanotube Thin-Film Electronics.Adv. Electron. Mater. 2019,5 (8), 1900122. https://doi.org/10.1002/aelm.201900122.
2.Si, J.; Zhong, D.; Xu, H.; Xiao, M.; Yu, C.; Zhang, Z.; Peng, L.-M. Scalable Preparation of High-Density Semiconducting Carbon Nanotube Arrays for High-Performance Field-Effect Transistors.ACS Nano 2018,12 (1), 627–634. https://doi.org/10.1021/acsnano.7b07665.
3.Zhu, M.-G.;Si, J.; Zhang, Z.; Peng, L.-M. Aligning Solution-Derived Carbon Nanotube Film with Full Surface Coverage for High-Performance Electronics Applications.Adv. Mater. 2018,30 (23), 1707068. https://doi.org/10.1002/adma.201707068.
4.Qiu, C.; Liu, F.; Xu, L.; Deng, B.; Xiao, M.;Si, J.; Lin, L.; Zhang, Z.; Wang, J.; Guo, H.; Peng, H.; Peng, L.-M. Dirac-Source Field-Effect Transistors as Energy-Efficient, High-Performance Electronic Switches.Science 2018,361 (6400), 387–392. https://doi.org/10.1126/science.aap9195.
5.Zhong, D.; Zhang, Z.; Ding, L.; Han, J.; Xiao, M.;Si, J.; Xu, L.; Qiu, C.; Peng, L.-M. Gigahertz Integrated Circuits Based on Carbon Nanotube Films.Nat. Electron. 2018,1 (1), 40–45. https://doi.org/10.1038/s41928-017-0003-y.
6.Yang, F.; Wang, X.;Si, J.; Zhao, X.; Qi, K.; Jin, C.; Zhang, Z.; Li, M.; Zhang, D.; Yang, J.; Zhang, Z.; Xu, Z.; Peng, L.-M.; Bai, X.; Li, Y. Water-Assisted Preparation of High-Purity Semiconducting (14,4) Carbon Nanotubes.ACS Nano 2017,11 (1), 186–193. https://doi.org/10.1021/acsnano.6b06890.
7.Liu, L.; Qiu, C.; Zhong, D.;Si, J.; Zhang, Z.; Peng, L.-M. Scaling down Contact Length in Complementary Carbon Nanotube Field-Effect Transistors.Nanoscale 2017,9 (27), 9615–9621. https://doi.org/10.1039/C7NR03223D.
8.Si, J.; Liu, L.; Wang, F.; Zhang, Z.; Peng, L.-M. Carbon Nanotube Self-Gating Diode and Application in Integrated Circuits.ACS Nano 2016,10 (7), 6737–6743. https://doi.org/10.1021/acsnano.6b02126.
9.Qiu, C.; Zhang, Z.; Zhong, D.;Si, J.; Yang, Y.; Peng, L.-M. Carbon Nanotube Feedback-Gate Field-Effect Transistor: Suppressing Current Leakage and Increasing On/Off Ratio.ACS Nano 2015,9 (1), 969–977. https://doi.org/10.1021/nn506806b.
10.Kang, L.; Hu, Y.; Zhong, H.;Si, J.; Zhang, S.; Zhao, Q.; Lin, J.; Li, Q.; Zhang, Z.; Peng, L.; Zhang, J. Large-Area Growth of Ultra-High-Density Single-Walled Carbon Nanotube Arrays on Sapphire Surface.Nano Res. 2015,8 (11), 3694–3703. https://doi.org/10.1007/s12274-015-0869-9.
11.Cheng, G.; Song, Z.; Yang, J.;Si, J. The Bounds of the Eigenvalues for Rank-One Modification of Hermitian Matrix.Numer. Linear Algebra Appl. 2014,21 (1), 98–107. https://doi.org/10.1002/nla.1867.
12.Liang, S.; Zhang, Z.;Si, J.; Zhong, D.; Peng, L.-M. High-Performance Carbon-Nanotube-Based Complementary Field-Effect-Transistors and Integrated Circuits with Yttrium Oxide.Appl. Phys. Lett. 2014,105 (6), 063101. https://doi.org/10.1063/1.4892918.
13.Si, J.; Wei, J.; Chen, W.; Zhang, B. Electric Field Distribution Around Drain-Side Gate Edge in AlGaN/GaN HEMTs: Analytical Approach.IEEE Trans. Electron Devices 2013,60 (10), 3223–3229. https://doi.org/10.1109/TED.2013.2272055.
